by The global IGBT and Super Junction MOSFET Market is estimated to be valued at US$ 16178.23 Mn in 2023 and is expected to exhibit a CAGR of 12.% over the forecast period 2023 to 2030, as highlighted in a new report published by Coherent Market Insights.
Market Overview:
IGBT or Insulated Gate Bipolar Transistor is a three terminal electronic device consisting of four alternating layers of semiconductors like silicon. While Super Junction MOSFET or Super Junction Metal-Oxide-Semiconductor Field-Effect Transistor is a vertical power MOSFET structure where the n- pillar regions and p- pillar regions alternate instead of a continuous drift region. Both IGBT and Super Junction MOSFET are power semiconductor devices used in various industries for applications like consumer electronics, automotive, industrial, telecommunications, transportation and renewable energy among others. These devices help in switching and controlling high power loads with high efficiency, fast switching speed and low thermal resistance.
Market key trends:
One of the key trends in IGBT and Super Junction MOSFET Market Size is growing applications in electric vehicles. With rising demand for electric vehicles globally, demand for their components like motor control units, converters, chargers and other power systems is also increasing significantly. As IGBTs and Super Junction MOSFETs help improve the efficiency, reliability and power density of electric drivetrains and charging systems, their adoption is rising steadily. Furthermore, increasing renewable energy adoption is also boosting the market. These power devices are used extensively in solar photovoltaic inverters, wind turbine systems and other applications related to sustainable energy. Their ability to switch high voltages with minimal power losses makes them indispensable for renewable energy equipment.
Porter’s Analysis
Threat of new entrants: New entrants face high entry barriers in the form of high initial capital investments required to develop new technologies. Bargaining power of buyers: There are a few large buyers in the market who have high bargaining power due to their volume purchases. Bargaining power of suppliers: Few large players dominate the supply side giving them high bargaining power over manufacturers.
Threat of new substitutes: Advent of new wide bandgap materials like Silicon Carbide and Gallium Nitride possess threat to traditional IGBTs and MOSFETs. Competitive rivalry: Intense competition among existing players to gain market share keeping pricing and quality under check.
Key Takeaways
The global IGBT and Super Junction MOSFET Market is expected to witness high growth, exhibiting a CAGR of 12% over the forecast period, due to increasing demand for high-efficiency power electronic devices from the automotive sector. The automotive industry is rapidly shifting towards electrification with rising production of electric and hybrid vehicles which requires efficient power modules containing IGBTs and MOSFETs.
The Asia Pacific region is expected to dominate the market, accounting for over 40% of global revenues, led by China, Japan and other developing Asian countries. This can be attributed to the large presence of a robust automotive manufacturing industry and power electronics companies in the region. Countries like China, Taiwan and South Korea are manufacturing hubs for IGBTs and MOSFETs catering to both domestic as well as international clients.
Key players operating in the IGBT and Super Junction MOSFET market are Infineon Technologies AG, Vishay Intertechnology, Inc., Mitsubishi Electric Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., Toshiba Corporation, Hitachi Power Semiconductor Device Ltd., Fairchild Semiconductor International, Inc., Semikron Elektronik GmbH & Co. KG, and ABB Ltd. Major players are engaged in new product development and expansion activities to strengthen their market position.
*Note:
1. Source: Coherent Market Insights, Public sources, Desk research
2. We have leveraged AI tools to mine information and compile it
